Samsung Electronics declares cutting-edge 512 GB DDR5 RAM module
Who doesn’t need more speed at less power?
Samsung Electronics declared a cutting-edge new 512GB DDR5 RAM module Thursday – which it said would consume 13% less electricity while performing at twice the speed of existing high-end tech.
The South Korea-based tech organization said its industry-first product depends on another technology could High-K Metal Gate, or HKMG, and will be supported by Intel’s forthcoming, state-of-the-art Xeon Scalable processors.
“By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond,” Young-Soo Sohn, the company’s vice president of DRAM memory planning, said in a statement.
The product is relied upon to meet supercomputing, AI and AI needs before in the eventually showing up in consumer computers.
Samsung developed HKMG contributes 2018 – they use hafnium instead of silicon and have customarily been utilized in logic semiconductors, the organization said. In any case, by placing it in DRAM modules, it will save money on power consumption.
The 512 GB limit is gotten by stacking eight layers of 16 GB chips, as per the organization.
The new DDR5 modules are required to come out not long from now – also Intel’s Xeon Scalable processors, codenamed “Sapphire Rapids.”
“As the amount of data to be moved, stored and processed increases exponentially, the transition to DDR5 comes at a critical inflection point for cloud datacenters, networks and edge deployments,” Intel Vice President and GM of Memory and IO Technology Carolyn Duran said in a statement.
Because of supply and demand issues, the new RAM is required to launch with a price hike of 30 to 40% prior to stabilizing.